Localized states in InxGa1-xN epitaxial film

被引：12

作者：

Chang, H. -S. ^{[1
,2
]}

Hsu, T. M. ^{[1
,2
]}

Chuang, T. -F. ^{[1
,2
]}

Chen, W-Y. ^{[1
,2
]}

Gwo, S. ^{[3
]}

Shen, C. -H. ^{[3
]}

机构：

[1] Natl Cent Univ, Dept Phys, Jhongli 32001, Taiwan

[2] Natl Cent Univ, Ctr Nano Sci & Technol, Jhongli 32001, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

来源：

SOLID STATE COMMUNICATIONS | 2009年 / 149卷 / 1-2期

关键词：

InxGa1-xN; Localized states; Photoluminescence; LIGHT-EMITTING-DIODES; INGAN QUANTUM DOTS; PHOTOLUMINESCENCE; TEMPERATURE; EMISSION; DYNAMICS; SHIFT; WELL;

D O I：

10.1016/j.ssc.2008.10.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This study investigated localized states from In0.36Ga0.64N epitaxial film grown on a Si (111) substrate by performing macro-photoluminescence, micro-photoluminescence and time-resolved micro-photoluminescence experiments. Experimental data revealed two localized states - single and extended. The single localized state is a single-quantum-dot-like deep confined energy state, which is responsible for the bright line emissions. The extended localized state is a shallow confined energy state, which is related to a broad background emission. This work suggests that the origin of single and extended localized states is the indium-rich InxGa1-xN cluster and the spatial indium concentration fluctuation, respectively. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：18 / 20

页数：3

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