AlxTe1-x selector with high ovonic threshold switching performance for memory crossbar arrays

被引：20
作者：
Gao, Tian [1 ]
Feng, Jie [1 ]
Ma, Haili [1 ]
Zhu, Xi [1 ]
Ma, Zhixian [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Minist Educ, Key Lab Thin Film & Microfabricat, Shanghai 200240, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 16期
关键词：
D O I：
10.1063/1.5089818
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the fabrication of a bidirectional selector based on threshold switching (TS) material AlxTe1-x. By modulating the composition and the thickness of the AlxTe1-x film layer, an optimized bidirectional selector with the advantages of being electroforming-free, with sufficient operating current (1 mA), satisfactory selectivity (ca. 5.9 x 10(3)), appropriately small threshold voltage (ca. +/- 60.7 V), and excellent switching uniformity was fabricated. The trap-limited conduction model was employed to explain the TS characteristics of the W/AlxTe(1-x)/W device. The application of a high electric field to the devices is considered to induce the tunneling of the high-electric field-derived carriers from deep traps to shallow traps, switching the device to the on-state. Published under license by AIP Publishing.
引用
收藏
页数：5
相关论文
共 39 条
  • [1] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS
    ADLER, D
    SHUR, MS
    SILVER, M
    OVSHINSKY, SR
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3289 - 3309
  • [2] Nanosecond threshold switching of GeTe6 cells and their potential as selector devices
    Anbarasu, M.
    Wimmer, Martin
    Bruns, Gunnar
    Salinga, Martin
    Wuttig, Matthias
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (14)
  • [3] Bricalli A, 2016, INT EL DEVICES MEET
  • [4] Burr G, 2012, VLSI TECHNOLOGY IEEE
  • [5] Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
    Cha, Euijun
    Park, Jaehyuk
    Woo, Jiyong
    Lee, Daeseok
    Prakash, Amit
    Hwang, Hyunsang
    [J]. APPLIED PHYSICS LETTERS, 2016, 108 (15)
  • [6] Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance
    Chen, Lin
    Xu, Yan
    Sun, Qing-Qing
    Zhou, Peng
    Wang, Peng-Fei
    Ding, Shi-Jin
    Zhang, David Wei
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) : 1296 - 1298
  • [7] Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
    Cheng, Chun-Hu
    Yeh, Fon-Shan
    Chin, Albert
    [J]. ADVANCED MATERIALS, 2011, 23 (07) : 902 - +
  • [8] Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM
    Choi, Byung Joon
    Chen, Albert B. K.
    Yang, Xiang
    Chen, I-Wei
    [J]. ADVANCED MATERIALS, 2011, 23 (33) : 3847 - +
  • [9] Fairman R., 2004, SEMICONDUCTING CHALC
  • [10] Polarization dependent two-photon properties in an organic crystal
    Fang, Hong-Hua
    Yang, Jie
    Ding, Ran
    Chen, Qi-Dai
    Wang, Lei
    Xia, Hong
    Feng, Jing
    Ma, Yu-Guang
    Sun, Hong-Bo
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (10)
1234