Raman tensor of layered WS2

被引：20

作者：

Ding, Ying ^{[1
]}

Zheng, Wei ^{[1
]}

Lin, Zeguo ^{[1
]}

Zhu, Ruinan ^{[1
]}

Jin, Mingge ^{[1
]}

Zhu, Yanming ^{[1
]}

Huang, Feng ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

SCIENCE CHINA-MATERIALS | 2020年 / 63卷 / 09期

基金：

中国国家自然科学基金;

关键词：

TRANSITION-METAL DICHALCOGENIDES; PHONON; MONOLAYER; ELECTRONICS; SCATTERING; DYNAMICS;

D O I：

10.1007/s40843-020-1321-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1848 / 1854

页数：7

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