AlGaN/GaN varactor diode for integration in HEMT circuits

被引：28

作者：

Marso, M ^{[1
]}

Wolter, M ^{[1
]}

Javorka, P ^{[1
]}

Fox, A ^{[1
]}

Kordos, P ^{[1
]}

机构：

[1] Res Ctr Juelich, Inst Thin Films & Interfaces, D-52425 Julich, Germany

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 24期

关键词：

D O I：

10.1049/el:20011007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication and characterisation of metal-semiconductor-metal (MSM) diodes above an AlGaN/GaN HEMT layer system for varactor applications are reported. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. Capacitance-voltage measurements exhibit ratios up to 100, tunable by the electrode geometry. These results exceed best values for published heterostructure varactor diodes. Fabrication of AlGaN/GaN HEMTs on the same layer system with identical technology prove the potential for monolithic integration.

引用

页码：1476 / 1478

页数：3

共 6 条

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