Electro-Thermal Analysis and Optimisation of Edge Termination of Power Diode Supported by 2-D/3-D Numerical Modelling and Simulation

被引：1
作者：
Pribytny, P. [1 ]
Donoval, D. [1 ]
Chvala, A. [1 ]
Marek, J. [1 ]
Molnar, M. [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Inst Elect & Photon, Bratislava 81219, Slovakia
来源：
MICROTHERM' 2013 - MICROTECHNOLOGY AND THERMAL PROBLEMS IN ELECTRONICS | 2014年 / 494卷
关键词：
D O I：
10.1088/1742-6596/494/1/012003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P+NN+ power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.
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页数：6
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