Simultaneous measurement of the electronic and lattice temperatures in GaAs/Al0.45Ga0.55As quantum-cascade lasers:: Influence on the optical performance

被引:66
作者
Spagnolo, V
Scamarcio, G
Page, H
Sirtori, C
机构
[1] Policlin Bari, INFM Reg Lab LIT, I-70126 Bari, Italy
[2] Policlin Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy
[3] Thales Res & Technol, F-91404 Orsay, France
关键词
D O I
10.1063/1.1739518
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measured the electronic and lattice temperatures in steady-state operating GaAs/AlGaAs quantum-cascade lasers, by means of microprobe band-to-band photoluminescence. Thermalized hot-electron distributions with temperatures up to 800 K are established. The comparison of our data with the analysis of the temperature dependence of device optical performances shows that the threshold current is determined by the lattice temperature. (C) 2004 American Institute of Physics.
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收藏
页码:3690 / 3692
页数:3
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