Effect of Boundary Conditions on Thermal Noise of Intrinsic Terminal Currents in Bipolar Transistors Pertinent to Quasi-Ballistic Transport

被引：1
|
作者：
Xia, Kejun [1 ]
Niu, Guofu [2 ]
机构：
[1] Maxim Integrated, Beaverton, OR 97005 USA
[2] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 12期
关键词：
Bipolar transistor (BJT); device modeling; high-frequency noise; HIERARCHICAL 2-D DD; CARRIER TRANSPORT; SIGE DEVICES; SHOT-NOISE; RF NOISE; MODEL; SIMULATIONS;
D O I：
10.1109/TED.2013.2287878
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper examines the impact of quasi-ballistic transport (QBT) on bipolar transistor (BJT) intrinsic terminal current noise by analytically solving the general 3-D minority carrier noise transport equation using Hansen's nonhomogenous boundary conditions with extensions to include injection noise. Transistor noises are further expressed in Y-parameters, as was done in the widely used van Vliet model, with extra corrections accounting for QBT. For 10-nm base width of BJTs without base built-in field, while QBT is significant in affecting I-C, S-ic is shown to be less than but close to the classic 2(q) I-C.
引用
收藏
页码：4226 / 4233
页数：8
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