Gate Controlled Diode Characteristics of Super Steep Subthreshold Slope PN-Body Tied SOI-FET for High Efficiency RF Energy Harvesting

被引：0

作者：

Momose, Shun ^{[1
]}

Ida, Jiro ^{[1
]}

Mori, Takayuki ^{[1
]}

Yoshida, Takahiro ^{[1
]}

Iwata, Jumpei ^{[1
]}

Horii, Takashi ^{[1
]}

Furuta, Takahiro ^{[1
]}

Itoh, Kenji ^{[1
]}

Ishibashi, Koichiro ^{[2
]}

Arai, Yasuo ^{[3
]}

机构：

[1] Kanazawa Inst Technol, Div Elect Engn, 7-1 Ohgigaoka, Nonoichi, Ishikawa 9218501, Japan

[2] Univ Electrocommun, Tokyo, Japan

[3] KEK, High Energy Accelerator Res Org, Tsukuba, Ibaraki, Japan

来源：

2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2017年

关键词：

Steep Subthreshold slope; SOI MOSFET; RF Energy Harvesting;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate controlled diode (GCD) characteristics with our newly proposed super steep subthreshold slope (SS) "PN-Body Tied SOI-FET" was shown, for the first time, compared with the conventional diodes. It shows the super steep characteristics, the low leakage current and the sharp On-characteristics even on the ultralow voltage range of 50mV. The simple circuit simulations also indicated that the GCD with "PN-Body Tied SOI-FET" will achieve the high efficiency rectification on the ultralow input power of the RF energy harvesting. Additionally, the slight shift of the voltage of the zero current was confirmed as a specific characteristics on this GCD.

引用

页数：3

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