Fabrication of SnS thin films by the successive ionic layer adsorption and reaction (SILAR) method

被引：38

作者：

Ghosh, Biswajit ^{[1
]}

Das, Madhumita ^{[1
]}

Banerjee, Pushan ^{[1
]}

Das, Subrata ^{[1
]}

机构：

[1] Jadavpur Univ, Sch Energy Studies, Adv Mat & Solar Photovolta Div, Kolkata 700032, W Bengal, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 12期

关键词：

D O I：

10.1088/0268-1242/23/12/125013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tin sulfide films of 0.20 mu m thickness were grown on glass and ITO substrates by the successive ionic layer adsorption and reaction (SILAR) method using SnSO4 and Na2S solution. The as-grown films were well covered and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films and provided information on the crystallite size and residual strain of the thin films. FESEM revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDX showed that as-grown SnS films were slightly rich in tin component. High absorption in the visible region was evident from UV-Vis transmission spectra. PL studies were carried out with 550 nm photon excitation. To the best of our knowledge, however, no attempt has been made to fabricate a SnS thin film using the SILAR technique.

引用

页数：6

共 11 条

[1] ELECTRICAL AND OPTICAL BEHAVIOR OF VAPOR-GROWN SNS2 CRYSTALS [J].