Ultrafast photocurrents and THz generation in single InAs-nanowires

被引：24

作者：

Erhard, Nadine ^{[1
,2
]}

Seifert, Paul ^{[1
,2
]}

Prechtel, Leonhard ^{[1
,2
]}

Hertenberger, Simon ^{[1
,2
]}

Karl, Helmut ^{[3
]}

Abstreiter, Gerhard ^{[1
,2
,4
]}

Koblmueller, Gregor ^{[1
,2
]}

Holleitner, Alexander W. ^{[1
,2
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Tech Univ Munich, Phys Dept, D-85748 Garching, Germany

[3] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[4] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany

来源：

ANNALEN DER PHYSIK | 2013年 / 525卷 / 1-2期

关键词：

Time-resolved optoelectronic nanoscale transport; InAs nanowire; THz source; HOT-CARRIER RELAXATION; TERAHERTZ EMISSION; TIME; TRANSPORT; SURFACES; SILICON;

D O I：

10.1002/andp.201200181

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources.

引用

页码：180 / 188

页数：9

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