Silicon Photonics at the University of Surrey

被引:0
作者
Reed, G. T. [1 ]
Mashanovich, G. [1 ]
Gardes, F. Y. [1 ]
Gwilliam, R. M. [1 ]
Wright, N. M. [1 ]
Thomson, D. J. [1 ]
Timotijevic, B. D. [1 ]
Litvinenko, K. L. [1 ]
Headley, W. R. [1 ]
Smith, A. J. [1 ]
Knights, A. P. [2 ]
Jessop, P. E. [2 ]
Tarr, N. G. [3 ]
Deane, J. H. B. [4 ]
机构
[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[2] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[3] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada
[4] Univ Surrey, Dept Math & Stat, Guildford, Surrey GU2 7XH, England
来源
PHOTONIC MATERIALS, DEVICES, AND APPLICATIONS III | 2009年 / 7366卷
基金
英国工程与自然科学研究理事会;
关键词
Silicon-On-Insulator (SOI); optical modulators; optical filters; ring resonators; silicon photonics; silicon waveguides; RIB WAVE-GUIDES; NONLINEAR ABSORPTION; RAMAN AMPLIFICATION; MODULATOR;
D O I
10.1117/12.823291
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon Photonics is a field that has seen rapid growth and dramatic changes in the past 5 years. According to the MIT Communications Technology Roadmap [1], which aims to establish a common architecture platform across market sectors with a potential $20B in annual revenue, silicon photonics is among the top ten emerging technologies. This has in part been a consequence of the recent involvement of large semiconductor companies around the world, particularly in the USA. Significant investment in the technology has also followed in Japan, Korea, and in the European Union. Low cost is a key driver, so it is imperative to pursue technologies that are mass-producible. Therefore, Silicon Photonics continues to progress at a rapid rate. This paper will describe some of the work of the Silicon Photonics Group at the University of Surrey in the UK. The work is concerned with the sequential development of a series of components for silicon photonic optical circuits, and some of the components are discussed here. In particular the paper will present work on optical waveguides, optical filters, modulators, and lifetime modification of carriers generated by two photon absorption, to improve the performance of Raman amplifiers in silicon.
引用
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页数:12
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