High-density carrier dynamics in Ge/Si quantum dots studied by time-resolved photoluminescence spectroscopy

被引：3
作者：
Ueda, Kei [1 ]
Tayagaki, Takeshi [1 ,2 ]
Fukatsu, Susumu [3 ]
Kanemitsu, Yoshihiko [1 ,4 ]
机构：
[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan
[2] PRESTO JST, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tokyo, Grad Sch Arts & Sci, Tokyo 1538902, Japan
[4] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 17期
关键词：
Ge quantum dot; High-density carrier; Time-resolved photoluminescence; VISIBLE PHOTOLUMINESCENCE; ISLAND FORMATION; HUT CLUSTERS; GE; GROWTH;
D O I：
10.1016/j.jnoncrysol.2011.12.020
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We studied the temperature dependence of high-density carrier dynamics in as-grown and thermally annealed Ge quantum dots (QDs) in silicon crystals. In as-grown and thermally annealed samples, photoluminescence (PL) intensity exhibited a power-law dependence on the excitation intensity and its power-law index was similar to 0.7 at low temperatures. With increasing measurement temperature, PL intensity decreased and the index of the power-law function increased up to similar to 1.5, in which carrier recombination dynamics is dominated by a single carrier trapping. Moreover, in thermally annealed QDs, the index of the power law increased more rapidly than as-grown QDs, suggesting that the carrier recombination dynamics drastically changed in thermally annealed QDs. Effects of Ge/Si interface on high-density carrier recombination process are discussed. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2122 / 2125
页数：4
相关论文
共 32 条
[1]   Growth and characterization of self-assembled Ge-rich islands on Si [J].
Abstreiter, G ;
Schittenhelm, P ;
Engel, C ;
Silveira, E ;
Zrenner, A ;
Meertens, D ;
Jager, W .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (11) :1521-1528
[2]   Optical recombination from excited states in Ge/Si self-assembled quantum dots [J].
Boucaud, P ;
Sauvage, S ;
Elkurdi, M ;
Mercier, E ;
Brunhes, T ;
Le Thanh, V ;
Bouchier, D ;
Kermarrec, O ;
Campidelli, Y ;
Bensahel, D .
PHYSICAL REVIEW B, 2001, 64 (15)
[3]   Si/Ge nanostructures [J].
Brunner, K .
REPORTS ON PROGRESS IN PHYSICS, 2002, 65 (01) :27-72
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001) [J].
Dashiell, MW ;
Denker, U ;
Schmidt, OG .
APPLIED PHYSICS LETTERS, 2001, 79 (14) :2261-2263
[6]   Morphology and photoluminescence of Ge islands grown on Si(001) [J].
Goryll, M ;
Vescan, L ;
Lüth, H .
THIN SOLID FILMS, 1998, 336 (1-2) :244-247
[7]   Luminescence decay dynamics of self-assembled germanium islands in silicon [J].
Julsgaard, B. ;
Balling, P. ;
Hansen, J. Lundsgaard ;
Svane, A. ;
Larsen, A. Nylandsted .
APPLIED PHYSICS LETTERS, 2011, 98 (09)
[8]   ON THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE IN NANOMETER-SIZE GE CRYSTALLITES [J].
KANEMITSU, Y ;
UTO, H ;
MASUMOTO, Y ;
MAEDA, Y .
APPLIED PHYSICS LETTERS, 1992, 61 (18) :2187-2189
[9]   VISIBLE PHOTOLUMINESCENCE FROM OXIDIZED SI NANOMETER-SIZED SPHERES - EXCITON CONFINEMENT ON A SPHERICAL-SHELL [J].
KANEMITSU, Y ;
OGAWA, T ;
SHIRAISHI, K ;
TAKEDA, K .
PHYSICAL REVIEW B, 1993, 48 (07) :4883-4886
[10]   MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].
KANEMITSU, Y ;
UTO, H ;
MASUMOTO, Y ;
MATSUMOTO, T ;
FUTAGI, T ;
MIMURA, H .
PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830
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