Theoretical prediction of the structural, elastic, electronic and thermodynamic properties of V3M (M = Si, Ge and Sn) compounds

被引:5
作者
Chihi, T. [2 ]
Fatmi, M. [1 ,3 ]
机构
[1] Univ Ferhat Abbas, RUEM, Setif 19000, Algeria
[2] Univ Ferhat Abbas, LENMC, Setif 19000, Algeria
[3] Univ Ferhat Abbas, Lab Phys & Mech Metall Mat LP3M, Setif 19000, Algeria
关键词
Ab initio calculation; Electronic structure; Structural properties;
D O I
10.1016/j.spmi.2012.06.009
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Density functional theory (DFT), is used in our calculations to study the V3M (M = Si, Ge and Sn) compounds, we are found that V3Sn compound is mechanically unstable because of a negative C-44 = -19.41 GPa. For each of these compounds considered, the lowest energy structure is found to have the lowest N(E-f) value. Also there is a strong interaction between V and V, the interaction between M (M = Si, Ge, Sn) and V (M and M) is negative, not including Si [Sn]. In phonon density of states PDOS. the element contributions varies from lighter (high frequency) to heaviest (low frequency). (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:697 / 703
页数:7
相关论文
共 17 条
[1]  
Anton D.L., 1990, WRDCTR9041222
[2]  
Born M., 1955, American Journal of Physics, V23, p474., DOI DOI 10.1119/1.1934059
[3]  
Chang C.S., 1992, DISS ABSTR INT, V52, P206
[4]  
Debye P, 1912, ANN PHYS-BERLIN, V39, P789
[5]   Studies of high-temperature electron-phonon interactions with inelastic neutron scattering and first-principles computations [J].
Delaire, O. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (03) :523-529
[6]   The Planck theory of radiation and the theory of specific heat [J].
Einstein, A .
ANNALEN DER PHYSIK, 1906, 22 (01) :180-190
[7]  
Gokhale A.B., 1987, BINARY ALLOY PHASE D, V2, P1333
[8]   A NEUTRON-DIFFRACTION STUDY OF CR3SI [J].
JORGENSEN, JE ;
RASMUSSEN, SE .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1982, 38 (JAN) :346-347
[9]   SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (04) :1746-1747
[10]  
Nernst W., 1977, ANGEW PHYS CHEM, V17, P817