In Situ Electromigration in Cu-Sn and Ni-Sn Critical Solder Length for Three-Dimensional Integrated Circuits

被引：5

作者：

Huang, Y. T. ^{[1
]}

Chen, C. H. ^{[1
]}

Lee, B. H. ^{[2
]}

Chen, H. C. ^{[2
]}

Wang, C. M. ^{[2
]}

Wu, Albert T. ^{[1
,2
]}

机构：

[1] Natl Cent Univ, Dept Chem & Mat Engn, Jhongli 320, Taiwan

[2] SHENMAO Technol Inc, Taoyuan 328, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2016年 / 45卷 / 12期

关键词：

Diffusion; backstress; microstructure; GRAIN-ORIENTATION; DIFFUSION; JOINTS; DISSOLUTION; MECHANISM; CU/SN/CU; GROWTH; COPPER; SIDE;

D O I：

10.1007/s11664-016-4874-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in situ electromigration study has been conducted on U-groove Cu/Sn-3.5Ag/Cu and Ni/Sn-3.5Ag/Ni sandwich structures; the results were used to simulate microsolder joints passing current density of 1 x 10(4) A/cm(2) at 150A degrees C. The solder gap was only 15 mu m, shorter than the critical length of Sn-3.5Ag solder. Backstress was proved to exist at critical solder lengths and to influence the electromigration mechanism. Theoretical calculations of the diffusivity of Cu and Ni in Sn solder indicated that the degree to which the dominant diffusion species (Cu or Ni atoms) diffused through the solder line is retarded by the backstress effect. The morphologies of intermetallic compounds (IMCs) were observed, and the grain boundaries in Sn solder were measured using electron backscatter diffraction to determine the kinetics of intermetallic growth. The results reveal that the unique electromigration characteristics of microbump joints, including the diffusivity, morphology, and backstress, can be determined. The retardation of atomic migration improves the reliability against electromigration.

引用

页码：6163 / 6170

页数：8

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