Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst

被引：25

作者：

Eichfeld, Chad M. ^{[1
,2
]}

Gerstl, Stephan S. A. ^{[3
]}

Prosa, Ty ^{[4
]}

Ke, Yue ^{[1
]}

Redwing, Joan M. ^{[1
,2
]}

Mohney, Suzanne E. ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[3] ETH Zurich EMEZ, CH-8093 Zurich, Switzerland

[4] Cameca Instruments Inc, Madison, WI 53711 USA

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 21期

关键词：

SEMICONDUCTOR NANOWIRES; SI NANOWIRES; SOLAR-CELLS; TOMOGRAPHY; SINGLE;

D O I：

10.1088/0957-4484/23/21/215205

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vapor-liquid-solid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2 x 10(20) cm(3), which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550 degrees C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

引用

页数：6

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