Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods

被引：20
作者：
Giusca, Cristina E. [1 ]
Spencer, Steve J. [1 ]
Shard, Alex G. [1 ]
Yakimova, Rositza [2 ]
Kazakova, Olga [1 ]
机构：
[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[2] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
来源：
CARBON | 2014年 / 69卷
关键词：
EPITAXIAL GRAPHENE; LARGE-AREA; SURFACE; GROWTH;
D O I：
10.1016/j.carbon.2013.12.018
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The properties of epitaxial graphene on the C-face of SiC are investigated using comprehensive structural, chemical and electrical analyses. By matching similar nanoscale features on the surface potential and Raman spectroscopy maps, individual domains have been assigned to graphene patches of 1-5 monolayers thick, as well as bare SiC substrate. Furthermore, these studies revealed that the growth proceeds in an island-like fashion, consistent with the Volmer-Weber growth mode, illustrating also the presence of nucleation sites for graphene domain growth. Raman spectroscopy data shows evidence of large area crystallites (up to 620 nm) and high quality graphene on the C-face of SiC. A comprehensive chemical analysis of the sample has been provided by X-ray photoelectron spectroscopy investigations, further supporting surface potential mapping observations on the thickness of graphene layers. It is shown that for the growth conditions used in this study, 5 monolayer thick graphene does not form a continuous layer, so such thickness is not sufficient to completely cover the substrate. (C) 2014 Published by Elsevier Ltd.
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收藏
页码：221 / 229
页数：9
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