Diffusion limited Cu and Au nanocrystal formation in thin film SiO2

被引:14
|
作者
Johannessen, B
Kluth, P
Glover, CJ
Foran, GJ
Ridgway, MC
机构
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 2600, Australia
[2] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词
ion implantation; nanocrystals; EXAFS;
D O I
10.1016/j.nimb.2005.08.009
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Elemental Cu and Au nanocrystals (NCs) were produced by high-energy ion-implantations into amorphous silica (SiO2) and subsequent thermal annealing. By a combination of X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) we confirm both NC species to have the bulk face-centered cubic phase and estimate their average diameter. We concentrate on the investigation of the concentration and size-dependent coordination number (CN) of these matrix embedded NCs utilising extended X-ray absorption fine structure (EXAFS) spectroscopy. The CN is found to be suppressed compared to that of a bulk standard. The CN in Au NCs is found to be lower than that of Cu NCs in agreement with smaller average Au NC sizes. We explain this difference by the difference in diffusivity for the two atomic species in SiO2. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:133 / 136
页数:4
相关论文
共 50 条
  • [1] DIFFUSION OF AU THROUGH A FILM OF SIO2
    BADALOV, AZ
    SHUMAN, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (05): : 615 - &
  • [2] Environmental effects on Cu/SiO2 and Cu/Ti/SiO2 thin film adhesion
    Tymiak, NI
    Li, M
    Volinsky, AA
    Katz, Y
    Gerberich, WW
    MATERIALS RELIABILITY IN MICROELECTRONICS IX, 1999, 563 : 269 - 274
  • [3] Behavior of Ta thin film as a diffusion barrier in the Cu/barrier/SiO2 system
    Pan, JS
    Wee, ATS
    Huan, CHA
    Chai, JW
    ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 133 - 137
  • [4] Laser lateral crystallization of thin Au and Cu films on SiO2
    Kline, JE
    Leonard, JP
    THIN FILMS STRESSES AND MECHANICAL PROPERTIES XI, 2005, 875 : 207 - 212
  • [5] Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
    Takeyama, Mayumi B.
    Sato, Masaru
    Aoyagi, Eiji
    Noya, Atsushi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FA061 - 05FA064
  • [6] Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2
    Kluth, P
    Johannessen, B
    Glover, CJ
    Foran, GJ
    Ridgway, MC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 238 (1-4): : 285 - 289
  • [7] Preparation of a precursor solution for SiO2 film formation and its application to the formation of Au cluster-dispersed SiO2 films
    Mochizuki, C
    Sato, M
    Nakamura, I
    Matsubara, T
    Yoshida, T
    Otsuki, T
    NIPPON KAGAKU KAISHI, 2002, (02) : 135 - 140
  • [8] Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO2
    Takeyama, MB
    Itoi, T
    Satoh, K
    Sakagami, M
    Noya, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2542 - 2547
  • [9] Formation of microstructure in SiO2 thin film by a femtosecond laser pulse
    Kawamura, K
    Motomitsu, E
    Hirano, M
    Hosono, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (6B): : 4400 - 4403
  • [10] Formation of microstructure in SiO2 thin film by a femtosecond laser pulse
    Kawamura, Ken-Ichi
    Motomitsu, Eiji
    Hirano, Masahiro
    Hosono, Hideo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (6 B): : 4400 - 4403