Statistical analysis and modeling of programming and retention in PCM arrays

被引：26

作者：

Mantegazza, D. ^{[1
]}

Ielmini, D. ^{[1
]}

Varesi, E. ^{[2
]}

Pirovano, A. ^{[2
]}

Lacaita, A. L. ^{[1
]}

机构：

[1] Politecn Milan, DEI, Piazza L da Vinci 32, I-20133 Milan, Italy

[2] STMicroelect, FTM, Adv R&D, NVMTD, Agrate Brianza, Italy

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418933

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work programming and retention statistics in phase change memory arrays are discussed and modeled. In particular, we provide a) an analytical, empirical model for set, reset and retention statistics and b) a physics-based retention model based on crystallization in presence of composition fluctuations at the nm scale of the active material. The models allow predicting programming/retention distributions at array level.

引用

页码：311 / +

页数：2

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