Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

被引：200

作者：

Lee, Chee Huei ^{[1
]}

Wang, Jiesheng ^{[1
]}

Kayatsha, Vijaya K. ^{[1
]}

Huang, Jian Y. ^{[2
]}

Yap, Yoke Khin ^{[1
]}

机构：

[1] Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA

[2] Sandia Natl Labs, Ctr Integrated Nanotechnol CINT, Albuquerque, NM 87185 USA

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 45期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1088/0957-4484/19/45/455605

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 degrees C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.

引用

页数：5

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