Thermal ionization of impurity centers in Fe-doped Bi12SiO20 and Bi12GeO20 crystals

被引：4

作者：

Panchenko, TV ^{[1
]}

机构：

[1] Dnepropetrovsk State Univ, UA-320625 Dnepropetrovsk, Ukraine

来源：

PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 06期

关键词：

D O I：

10.1134/1.1130904

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The spectral and temperature dependence of the optical absorption and thermally stimulated depolarization currents in Fe-doped Bi12SiO20 and Bi12GeO20 crystals are investigated in the photon energy range 1.36-3.46 eV and temperature 85-750 K. The results show thermally induced electron redistribution between donor and acceptor levels and defect association-dissociation processes and are discussed using the configuration-coordinate model. (C) 1999 American Institute of Physics. [S1063-7834(99)01706-2].

引用

页码：916 / 921

页数：6

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