Spin-dependent collection in ferromagnet/semiconductor contacts

被引：1

作者：

Bournel, A ^{[1
]}

Dollfus, P ^{[1
]}

Hesto, P ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 240卷 / 1-3期

关键词：

spin injection; semiconductors III-V;

D O I：

10.1016/S0304-8853(01)00764-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In ferromagnet/semiconductor contacts, the different timescales of the phenomena driving the spin transport in the semiconductor induce a strong reduction of the possible spin filtering effect. We propose an original structure with double contacts to overcome this difficulty. Using Monte Carlo simulation, we show that the spin asymmetry of the current collected in such a structure may be significantly higher than in a single contact. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：217 / 219

页数：3

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