A W-Band Medium Power Amplifier in 90 nm CMOS

被引：34

作者：

Jiang, Yu-Sian ^{[1
,2
]}

Tsai, Jeng-Han ^{[3
]}

Wang, Huei ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan

[3] Yuan Ze Univ, Dept Commun Engn, Tao Yuan 320, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 12期

关键词：

CMOS; microwave monolithic integrated circuit (MMIC); power amplifier (PA); W-band;

D O I：

10.1109/LMWC.2008.2007712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P-sat) is 12 dBm between 90 and 100 GHz for V-ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.

引用

页码：818 / 820

页数：3

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