A 243 GHz LNA Module Based on mHEMT MMICs With Integrated Waveguide Transitions

被引：22

作者：

Hurm, V. ^{[1
]}

Weber, R. ^{[1
]}

Tessmann, A. ^{[1
]}

Massler, H. ^{[1
]}

Leuther, A. ^{[1
]}

Kuri, M. ^{[1
]}

Riessle, M. ^{[1
]}

Stulz, H. P. ^{[1
]}

Zink, M. ^{[1
]}

Schlechtweg, M. ^{[1
]}

Ambacher, O. ^{[1
]}

Narhi, T. ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

[2] European Space Agcy ESA ESTEC, NL-2200 AG Noordwijk, Netherlands

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2013年 / 23卷 / 09期

关键词：

Low-noise amplifier (LNA); metamorphic HEMT (mHEMT); millimeter-wave integrated circuit (MMIC); noise figure; packaging; waveguide transition; WR-03 waveguide band;

D O I：

10.1109/LMWC.2013.2272610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For use in a millimeter-wave direct detection radiometer for earth remote sensing, we have developed a low-noise amplifier (LNA) module with a small-signal gain of 19.5 dB at 243 GHz and a 3 dB bandwidth of 40 GHz. The implemented three-stage LNA MMIC has been manufactured using a 50 nm gate length metamorphic HEMT (mHEMT) technology on 50 m thick GaAs substrates. Each of the two on-chip integrated E-plane probe waveguide transitions offers a transmission loss of only 0.5 dB at 243 GHz including a 7.5 mm long WR-3.4 waveguide. Due to the low-loss packaging, the LNA module achieves a low noise figure of only 6.0 dB at room temperature.

引用

页码：486 / 488

页数：3

共 9 条

[1]

[Anonymous], IEEE MTT S INT MICR

[2]

Hurm V, 2012, ASIA PACIF MICROWAVE, P145, DOI 10.1109/APMC.2012.6421527

[3]

Kangas V., 2012, P 12 SPEC M MICR RAD, P1

[4]

Kangaslahti P., 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest, Montreal, QC, P1, DOI [10.1109/MWSYM.2012.6259468, DOI 10.1109/MWSYM.2012.6259468]

[5] An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime [J].

Samoska, Lorene A. .

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2011, 1 (01) :9-24

[6]

Sarkozy S., 2011, P SPIE, V8023

[7] Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz [J].

Tessmann, Axel ;

Leuther, Arnulf ;

Hurm, Volker ;

Kallfass, Ingmar ;

Massler, Hermann ;

Kuri, Michael ;

Riessle, Markus ;

Zink, Martin ;

Loesch, Rainer ;

Seelmann-Eggebert, Matthias ;

Schlechtweg, Michael ;

Ambacher, Oliver .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (10) :2193-2202

[8]

Varonen M., 2012, IEEE CSICS LA JOLL C, P1

[9]

Weber R, 2012, EUR MICROW INTEGRAT, P187

← 1 →