Graphene Growth and Carbon Diffusion Process during Vacuum Heating on Cu(111)/Al2O3 Substrates

被引:21
作者
Ogawa, Shuichi [1 ]
Yamada, Takatoshi [2 ]
Ishidzuka, Shinji [3 ]
Yoshigoe, Akitaka [4 ]
Hasegawa, Masataka [2 ]
Teraoka, Yuden [4 ]
Takakuwa, Yuji [1 ]
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan
[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[3] Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan
[4] Japan Atom Energy Agcy, Sayo, Hyogo 6795198, Japan
关键词
X-RAY PHOTOELECTRON; SURFACE-CHEMISTRY; OXIDATION; SPECTROSCOPY; OXIDE; PHOTOEMISSION; NICKEL; COPPER; CU;
D O I
10.7567/JJAP.52.110122
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, the behavior of carbon atoms in the annealing/cooling process of graphene/Cu(111) substrates is investigated using photoelectron spectroscopy and secondary ion mass spectroscopy. After the growth of graphene on Cu(111) surfaces, Cu2O was formed at the graphene/Cu interface during transportation through air atmosphere. The Cu2O layer completely disappeared by vacuum annealing at 500 degrees C. Graphene was decomposed and carbon atoms diffused into the Cu substrate by further elevation of annealing temperature to 950 degrees C. When the sample was cooled down, the carbon atoms did not segregate on the surface and remained in the Cu substrate. This result indicates the carbon atoms easily diffuse into Cu substrates in vacuum annealing while the amount of diffused carbon atoms in the thermal chemical vapor deposition (CVD) process is smaller, suggesting that the barrier layer, which prevents the diffusion of C atoms, exists on Cu surfaces in the graphene CVD growth. (C) 2013 The Japan Society of Applied Physics
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页数:8
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