Grain boundary crystallization during furnace cooling of α-SiC sintered with Y2O3-Al2O3-CaO

被引:34
|
作者
Lee, JH
Kim, DY
Kim, YW
机构
[1] Univ Seoul, Dept Mat Sci & Engn, Seoul 130743, South Korea
[2] Seoul Natl Univ, Coll Engn, Ctr Microstruct Sci Mat, Seoul 151744, South Korea
[3] Seoul Natl Univ, Coll Engn, Sch Mat Sci & Engn, Seoul 151744, South Korea
基金
新加坡国家研究基金会;
关键词
grain boundary; liquid phase sintering; SiC; crystallization;
D O I
10.1016/j.jeurceramsoc.2005.01.050
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
For the SiC specimens prepared with Al2O3, Y2O3, and CaO (AYC-SiC), it was observed that the intergranular films and triple-junction phases were completely crystallized without subsequent heat-treatment after sintering. The intergranular films were determined to have hetero-epitaxially grown (Al,Si)(2)OC of a 2H-type wurtzite structure, with partial substitution of Al by Si. Segregation of Ca and Y at the grain boundaries wits also detected by energy-dispersive X-ray spectroscopy (EDS). On the other hand, the composition and structure of the triple junction phases were different from those of intergranular films. It showed hexagonal structure and topotactic relationships with SiC grains (a(Sic)//a(junction), c(SiC)//c(juncfion), and a(SiC) = 2a(junction)). (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1267 / 1272
页数:6
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