Wearable non-volatile memory devices based on topological insulator Bi2Se3/Pt fibers

被引：10

作者：

Zhang, Xiaoyan ^{[1
]}

Wen, Fusheng ^{[1
]}

Xiang, Jianyong ^{[1
]}

Wang, Xiaochen ^{[1
]}

Wang, Limin ^{[1
]}

Hu, Wentao ^{[1
]}

Liu, Zhongyuan ^{[1
]}

机构：

[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 10期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; RESISTANCE;

D O I：

10.1063/1.4930822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt fibers (15 mu m) were coated with topological insulator Bi2Se3 nanoplates via a single mode microwave-assisted synthesis technique. With the Bi2Se3/Pt fibers, flexible memory devices were facilely assembled, and they were demonstrated to exhibit rewritable nonvolatile resistive switching characteristics of low switching voltage (-1.2V and +0.7 V), high ON/OFF current ratio (10(6)), and good retention (4500 s), showing the potential application in data storage. The resistive switching mechanism was analyzed on the bases of formation and rupture of conductive filaments. (C) 2015 AIP Publishing LLC.

引用

页数：5

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