Dielectric charging failure analysis of RF-MEMS switch

被引：0
|
作者：
Song, Mingxin [1 ]
Zheng, Guoxu [1 ]
Wu, Rui [1 ]
机构：
[1] HUST, Inst Appl Sci & Technol, Dept Elect & Sci, Harbin, Peoples R China
来源：
MECHANICAL ENGINEERING, MATERIALS SCIENCE AND CIVIL ENGINEERING | 2013年 / 274卷
关键词：
RF-MEMS switch; Dielectric charging failure;
D O I：
10.4028/www.scientific.net/AMM.274.170
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MEMS devices commercialization is hindered by reality problems. Among them main problem is caused by dielectric charging. This paper studies charging model and charges distribution which are constructed on adhesion failure. Lifetime prediction formula is given. Simulation results show that under the condition of low driven voltage requirement, lifetime is bigger than 1000 hours when elastic coefficient (K) adopts 4-16N/m, 0.4-1 mu m for dielectric thickness, 2-5 mu m for plate distance and S3iN4 as dielectric material. At last, C-V performances inflected by dielectric charging is studied by theoretical calculations and analyzing positive or negative charging respectively.
引用
收藏
页码：170 / 173
页数：4
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