4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

被引：139

作者：

Wilcox, Keith G. ^{[1
]}

Tropper, Anne C. ^{[1
]}

Beere, Harvey E. ^{[2
]}

Ritchie, David A. ^{[2
]}

Kunert, Bernardette ^{[3
]}

Heinen, Bernd ^{[4
,5
]}

Stolz, Wolfgang ^{[4
,5
]}

机构：

[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] NAsP III V GmbH, D-35041 Marburg, Germany

[4] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[5] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

SURFACE-EMITTING LASER; SEMICONDUCTOR-LASER; OUTPUT POWER; FS PULSES; COMB;

D O I：

10.1364/OE.21.001599

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a passively mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses with 4.35 kW peak power. The average output power was 3.3 W and the VECSEL had a repetition rate of 1.67 GHz at a center wavelength of 1013 nm. A near-antiresonant, substrate-removed, 10 quantum well (QW) gain structure designed to enable femtosecond pulse operation is used. A SESAM which uses fast carrier recombination at the semiconductor surface and the optical Stark effect enables passive mode-locking. When 1 W of the VECSEL output is launched into a 2 m long photonic crystal fiber (PCF) with a 2.2 mu m core, a supercontinuum spanning 175 nm, with average power 0.5 W is produced. (C)2013 Optical Society of America

引用

页码：1599 / 1605

页数：7

共 15 条

[1] 10-GHz Self-Referenced Optical Frequency Comb [J].

Bartels, Albrecht ;

Heinecke, Dirk ;

Diddams, Scott A. .

SCIENCE, 2009, 326 (5953) :681-681

[2] SEMICONDUCTOR JOINING BY SOLID-LIQUID-INTERDIFFUSION (SLID) PROCESS .1. SYSTEMS AG-IN, AU-IN, AND CU-IN [J].

BERNSTEIN, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1282-+

[3] Modelocked GaSb disk laser producing 384 fs pulses at 2 μm wavelength [J].

Harkonen, A. ;

Grebing, C. ;

Paajaste, J. ;

Koskinen, R. ;

Alanko, J. -P. ;

Suomalainen, S. ;

Steinmeyer, G. ;

Guina, M. .

ELECTRONICS LETTERS, 2011, 47 (07) :454-455

[4] 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser [J].

Heinen, B. ;

Wang, T. -L. ;

Sparenberg, M. ;

Weber, A. ;

Kunert, B. ;

Hader, J. ;

Koch, S. W. ;

Moloney, J. V. ;

Koch, M. ;

Stolz, W. .

ELECTRONICS LETTERS, 2012, 48 (09) :516-U102

[5] Femtosecond high-power quantum dot vertical external cavity surface emitting laser [J].

Hoffmann, Martin ;

Sieber, Oliver D. ;

Wittwer, Valentin J. ;

Krestnikov, Igor L. ;

Livshits, Daniil A. ;

Barbarin, Yohan ;

Suedmeyer, Thomas ;

Keller, Ursula .

OPTICS EXPRESS, 2011, 19 (09) :8108-8116

[6] Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser [J].

Klopp, P. ;

Griebner, U. ;

Zorn, M. ;

Weyers, M. .

APPLIED PHYSICS LETTERS, 2011, 98 (07)

[7] Searching for applications with a fine-tooth comb [J].

Newbury, Nathan R. .

NATURE PHOTONICS, 2011, 5 (04) :186-188

[8]

Okhotnikov O.G., 2010, SEMICONDUCTOR DISK L

[9] A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses [J].

Quarterman, Adrian H. ;

Wilcox, Keith G. ;

Apostolopoulos, Vasilis ;

Mihoubi, Zakaria ;

Elsmere, Stephen P. ;

Farrer, Ian ;

Ritchie, David A. ;

Tropper, Anne .

NATURE PHOTONICS, 2009, 3 (12) :729-731

[10] Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power [J].

Scheller, M. ;

Wang, T. -L. ;

Kunert, B. ;

Stolz, W. ;

Koch, S. W. ;

Moloney, J. V. .

ELECTRONICS LETTERS, 2012, 48 (10) :588-U123

← 1 2 →