Relaxor behavior of Sr1-xBaxBi2Nb2O9 ceramics

被引:40
作者
Huang, SM [1 ]
Feng, CD [1 ]
Chen, LD [1 ]
Wang, Q [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
关键词
D O I
10.1111/j.1551-2916.2005.00662.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Sr1-xBaxBi2Nb2O9 (x = 0, 0.2, 0.4, 0.6, 0.8 and 1) ceramics were prepared by a conventional solid-state reaction method. Their structure and dielectric properties were investigated. X-ray diffraction analysis indicated that single-phase layered perovskites were obtained. A relaxor behavior was observed in Ba-substituted SrBi2Nb2O9. The temperature of the maximum dielectric constant T-m decreases linearly with increasing Ba content (x) up to x = 0.6, and only a little decrease in T. is observed when 0.6 < x < 0.8. However, there is a little increase in T-m when 0.8 < x <= 1.0. The degree of frequency dispersion Delta T-m, which is the T-m difference between 1 kHz and 1 MHz, increases from 0 degrees C for x = 0 to 110 degrees C for x = 1.
引用
收藏
页码:328 / 331
页数:4
相关论文
共 18 条
[1]   FERROELECTRICITY IN COMPOUND BA2BI4TI5O18 [J].
AURIVILLIUS, B ;
FANG, PH .
PHYSICAL REVIEW, 1962, 126 (03) :893-&
[2]   Cation disorder in ferroelectric Aurivillius phases of the type Bi(2)ANb(2)O(9) (A=Ba, Sr, Ca) [J].
Blake, SM ;
Falconer, MJ ;
McCreedy, M ;
Lightfoot, P .
JOURNAL OF MATERIALS CHEMISTRY, 1997, 7 (08) :1609-1613
[3]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[4]   Influence of Bi-site substitution on the ferroelectricity of the Aurivillius compound Bi2SrNb2O9 [J].
Duran-Martin, P ;
Castro, A ;
Millan, P ;
Jimenez, B .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (09) :2565-2571
[5]   Dielectric properties of layered perovskite Sr1-xAxBi2Nb2O9 ferroelectrics (A=La, Ca and x=0,0.1) [J].
Forbess, MJ ;
Seraji, S ;
Wu, Y ;
Nguyen, CP ;
Cao, GZ .
APPLIED PHYSICS LETTERS, 2000, 76 (20) :2934-2936
[6]   Dielectric properties of SrBi2-xPrxNb2O9 ceramics (x = 0, 0.04 and 0.2) [J].
Huang, SM ;
Feng, CD ;
Chen, LD ;
Wen, XW .
SOLID STATE COMMUNICATIONS, 2005, 133 (06) :375-379
[7]  
Ismunandar, 1999, J MATER CHEM, V9, P541
[8]   Dielectric relaxation in Ba-based layered perovskites [J].
Kholkin, AL ;
Avdeev, M ;
Costa, MEV ;
Baptista, JL ;
Dorogovtsev, SN .
APPLIED PHYSICS LETTERS, 2001, 79 (05) :662-664
[9]   Defect engineering for control of polarization properties in SrBi2Ta2O9 [J].
Noguchi, Y ;
Miyayama, M ;
Oikawa, K ;
Kamiyama, T ;
Osada, M ;
Kakihana, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :7062-7075
[10]   Cation-vacancy-induced low coercive field in la-modified SrBi2Ta2O9 [J].
Noguchi, Y ;
Miyayama, M ;
Oikawa, K ;
Kamiyama, T .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) :4261-4266