An X-Band High-Power and High-PAE PHEMT MMIC Power Amplifier for Pulse and CW Operation

被引：25

作者：

Chu, Chen-Kuo ^{[1
]}

Huang, Hou-Kuei ^{[1
]}

Liu, Hong-Zhi ^{[1
]}

Lin, Che-Hung ^{[1
]}

Chang, Ching-Hsueh ^{[2
]}

Wu, Chang-Luen ^{[2
]}

Chang, Chian-Sern ^{[2
]}

Wang, Yeong-Her ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelectron Technol Ctr, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Transcom Inc, Tainan 741, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 10期

关键词：

Monolithic microwave integrated circuit (MMIC); power added efficiency (PAE); power amplifier (PA); psuedomorphic high electronic mobility transistor (PHEMT); X-band;

D O I：

10.1109/LMWC.2008.2003485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-band high-power and high power added efficiency (PAE), two-stage AlGaAs/InGaAs/GaAs psuedomorphic high electronic mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) power amplifier is presented. The amplifier is designed to fully match a 50 11 input and output impedance. Based on a 0.35 mu m gate-length power PHEMT technology, the MMIC is fabricated on a 3 mil thick wafer. Under an 8 V DC bias condition, the characteristics of 17.5 dB small-signal gain, 10 W continuous wave mode saturation output power of 42% PAE, and 12.6 W pulse saturation output power of 52.6% PAE at 9.4 GHz can be achieved.

引用

页码：707 / 709

页数：3

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