Diode assisted giant positive magnetoresistance in n-type GaAs at room temperature

被引：9

作者：

Wang, Jimin ^{[1
,2
]}

Zhang, Xiaozhong ^{[1
,2
]}

Wan, Caihua ^{[1
,2
]}

Piao, Hong-Guang ^{[1
,2
]}

Luo, Zhaochu ^{[1
,2
]}

Xu, Sheng-Yong ^{[3
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, MOE, Key Lab Adv Mat, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Natl Ctr Electron Microscopy Beijing, Beijing 100084, Peoples R China

[3] Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 03期

基金：

美国国家科学基金会;

关键词：

NEGATIVE MAGNETORESISTANCE; FIELD MAGNETORESISTANCE; SILICON;

D O I：

10.1063/1.4813509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated a diode-assisted GaAs based magnetoresistance (MR) effect at room temperature. It is found that the introduction of diode effectively enhanced the MR effect of the GaAs device, and the MR increases with increasing the length/width ratio of the device. The MR can be achieved to about 2600% at 1.2 T with a high MR sense ability of about 44% at 0.06 T and an extremely low energy consumption of sub-micro Watt. This work may open a new way for the practical application of the semiconductor based magnetic sensing industry. (C) 2013 AIP Publishing LLC.

引用

页数：4

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