Abnormal phase segregation induced by void formation in Cu/Sn-5SBi/Cu solder joint during current stressing

被引：0

作者：

He, Hongwen ^{[1
]}

Xu, Guangchen ^{[2
]}

Gu, Fu ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China

[2] Beijing Univ Technol, Coll Mat Sci & Engn, Beijing, Peoples R China

来源：

2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012) | 2012年

关键词：

ELECTROMIGRATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work focused on the electromigration (EM) behavior of the Cu/Sn-58Bi/Cu solder joint affected by the large void formation. The as-reflowed one-dimensional solder joint was stressed with current density of 5 x 10(3) A/cm(2) at 80 degrees C continuously for 144h. The microstructural evolution was observed and analyzed by SEM. Results indicated that the abnormal Sn/Bi phase segregation was observed at the cathode interface of the solder joint owing to the early serious defects formation. Local current flow was aggregated surrounding the large void, resulting in the Joule heating accumulation there. Therefore, the original straight direction of the electrons was altered near the void region, leading to the unusual Bi migration.

引用

页码：1407 / 1410

页数：4