2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric

被引：7

作者：

Luan Su-Zhen ^{[1
]}

Liu Hong-Xia ^{[1
]}

Jia Ren-Xu ^{[1
]}

Cai Nai-Qiong ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2008年 / 57卷 / 06期

关键词：

dual-material gate; silicon-on-insulator; threshold volatage; analytical model;

D O I：

10.7498/aps.57.3807

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A 2-D analytical model for the surface potential and threshold voltage in fully depleted dual-material gate ( DMG) SOI MOSFETs with high-k dielectric is developed to investigate the short-channel effects(SCEs). Our model takes into account the effects of the length of the gate metals and their work functions, the applied drain biase, and the gate dielectric constant. We demonstrate that the surface potential in the channel region exhibits a stepped potential variation by the gate near the drain, resulting in suppressed SCEs. With dielectric constants increasing, this novel device shows inverse SCEs. The derived analytical models are in good agreement with the resafts of the two-dimensional device simulator ISE.

引用

页码：3807 / 3812

页数：6

共 10 条

[1] Analytical threshold voltage model for ultrathin SOI MOSFET's including short-channel and floating-body effects [J].