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Antimony-induced heterogeneous microstructure of Mg2Si0.6Sn0.4 thermoelectric materials and their thermoelectric properties
被引:14
作者:
Jang, Jeongin
[1
]
Ryu, Byungki
[1
]
Joo, Sung-Jae
[1
]
Kim, Bong-Seo
[1
]
Min, Bok-Ki
[1
]
Lee, Hee-Woong
[1
]
Park, Su-Dong
[1
]
Lee, Ho Seong
[2
]
Lee, Ji Eun
[1
]
机构:
[1] Korea Electrotechnol Res Inst, Thermoelect Convers Res Ctr, Chang Won 51543, South Korea
[2] Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea
基金:
新加坡国家研究基金会;
关键词:
Thermoelectric;
Magnesium tin silicide;
Phonon scattering;
Heterogeneous microstructure;
Minority carrier blocking;
HIGH FIGURE;
NANOSTRUCTURE;
PERFORMANCE;
MERIT;
BI;
AGPBMSBTE2+M;
EFFICIENCY;
D O I:
10.1016/j.jallcom.2017.12.203
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
In order to achieve enhancements in thermoelectric efficiency, microstructures that can form numerous interfaces have been investigated intensively for controlling the transport of charge carriers and heat-carrying phonons. In this paper, we report the heterogeneous microstructure of Mg2Si0.6Sn0.4 thermoelectric materials synthesized by a simple B2O3 encapsulation method and investigation of its influence on thermoelectric properties. The addition of Sb causes the evolution of a Sn-rich secondary phase and a heterogeneous microstructure consisting of Sn-deficient grains and a Sn-rich boundary phase, with coherent interfaces between them. The secondary phase induced by Sb doping suppressed the bipolar effect and reduced the thermal conductivity because of minority carrier blocking and phonon scattering at phase boundaries. However, high concentration of Sb in Sn-rich phase led to insufficient doping in Si-rich main phase and electron-hole compensation by Mg vacancies, resulting in decrease of the doping efficiency of Sb. (C) 2017 Elsevier B.V. All rights reserved.
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页码:129 / 138
页数:10
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