Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization

被引：1
|
作者：
Wolkenberg, A [1 ]
Przeslawski, T [1 ]
机构：
[1] INST ELECTR TECHNOL,PL-02668 WARSAW,POLAND
来源：
METAL/NONMETAL MICROSYSTEMS: PHYSICS, TECHNOLOGY, AND APPLICATIONS | 1996年 / 2780卷
关键词：
MBE GaAs layers; galvanomagnetic measurements; mobility; Hall bar; compensation ratio;
D O I：
10.1117/12.238149
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：170 / 178
页数：9
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