Optical gain spectra of unstrained graded GaAs/AlxGa1-xAs quantum well laser

被引:11
作者
Albuquerque, E. L. [1 ]
Fulco, U. L. [1 ]
Vasconcelos, M. S. [2 ]
Mauriz, P. W. [3 ]
机构
[1] Univ Fed Rio Grande do Norte, Dept Biofis & Farmacol, BR-59072970 Natal, RN, Brazil
[2] Univ Fed Rio Grande do Norte, Escola Ciencias & Tecnol, BR-59072970 Natal, RN, Brazil
[3] Inst Fed Educ Ciencia & Tecnol Maranhao, Dept Fis, BR-65020300 Sao Luis, MA, Brazil
关键词
Lasers; Quantum wells; Optical gain; Luttinger-Kohn method; Abrupt/non-abrupt interfaces; LIGHT-EMITTING-DIODES; INGAAS-GAAS; PARAMETERS; EFFICIENCY; INJECTION; ELECTRONS; DESIGN;
D O I
10.1016/j.physleta.2012.12.025
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have calculated the optical gain spectra in unstrained graded GaAs/AlxGa1-xAs single quantum well lasers as a function of the energy of the radiation, the quantum well width and the interface thickness. The optical gain spectra were calculated using the density matrix approach (Luttinger-Kohn method), considering the parabolic band model (conduction band), all subband mixing between the heavy and light holes (valence band), and the transversal electrical light polarization. Our results show that the optical peak gain is sensitive to the width and the graded profile of the interfaces, and is blue-shifted as a function of the interface width. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:582 / 586
页数:5
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