Gate metal induced reduction of surface donor states of AlGaN/GaN heterostructure on Si-substrate investigated by electroreflectance spectroscopy

被引：17

作者：

Shin, Jong Hoon ^{[1
]}

Jo, Young Je ^{[1
]}

Kim, Kwang-Choong ^{[1
]}

Jang, T. ^{[1
]}

Kim, Kyu Sang ^{[2
]}

机构：

[1] LG Elect, Syst IC R&D Lab, IGBT Part, Seoul, South Korea

[2] Sangji Univ, Dept Appl Phys & Elect, Wonju 220702, Gangwon Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 11期

关键词：

FIELD-EFFECT TRANSISTORS; 2-DIMENSIONAL ELECTRON-GAS;

D O I：

10.1063/1.3695056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface donor state of AlGaN/GaN heterostructure on Si-substrate was investigated at the presence of Schottky gate metal (Au,Ni) on the surface by using electroreflectance spectroscopy. The sheet carrier density of two-dimensional electron gas (2DEG) decreased significantly from 1.03 x 10(13)cm(-2) to 5.74 x 10(12)cm(-2) for Au and from 1.03 x 10(13)cm(-2) to 3.68 x 10(12)cm(-2) for Ni upon the introduction of Schottky gate metal. Through the analysis of the depletion of 2DEG, which is attributed to both Schottky junction and the lowered energy of Schottky barrier height, it was concluded that the diminished sheet carrier density of 2DEG originated from the reduction of surface donor state induced by gate metal. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695056]

引用

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