Modulation of external electric field on surface states of topological insulator Bi2Se3 thin films

被引：25

作者：

Liu, Genhua ^{[1
,2
,3
]}

Zhou, Guanghui ^{[2
,3
]}

Chen, Yong-Hai ^{[4
]}

机构：

[1] Cent S Univ Forestry & Technol, Coll Comp & Informat Engn, Changsha 410004, Hunan, Peoples R China

[2] Hunan Normal Univ, Minist Educ, Dept Phys, Changsha 410081, Hunan, Peoples R China

[3] Hunan Normal Univ, Minist Educ, Key Lab Low Dimens Quantum Struct & Manipulat, Changsha 410081, Hunan, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

基金：

中国国家自然科学基金;

关键词：

SINGLE DIRAC CONE;

D O I：

10.1063/1.4767998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study theoretically surface band structure and topological phase transition for Bi2Se3 thin films under an external electric field. It is demonstrated that an electric field vertical to the film surface can close or reopen a gap for surface states. We also study the spin-dependent transport property through an interface junction between regions without and with electric field on the film. Interestingly, the opacity and transparency of spin-down Dirac fermions through the junction can be modulated by changing the incident angle and the electric field strength. On the contrary, the spin-up Dirac fermions always penetrate through the junction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767998]

引用

页数：4

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