Zn-vacancy induced violet emission in p-type phosphorus and nitrogen codoped ZnO thin films grown by pulsed laser deposition

被引：35
作者：
Mannam, Ramanjaneyulu [1 ,2 ]
Eswaran, Senthil Kumar [3 ]
DasGupta, Nandita [4 ]
Rao, M. S. Ramachandra [1 ,2 ]
机构：
[1] Indian Inst Technol Madras, Dept Phys, Madras 600036, Tamil Nadu, India
[2] Indian Inst Technol, Nano Funct Mat Technol Ctr, Madras 600036, Tamil Nadu, India
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[4] Indian Inst Technol, Dept Elect Engn, Microelect & MEMS Lab, Madras 600036, Tamil Nadu, India
来源：
APPLIED SURFACE SCIENCE | 2015年 / 347卷
关键词：
p-type ZnO thin film; PLD; XPS; Photoluminescence; Hall effect; Heterojunction; N-DOPED ZNO; PHOTOLUMINESCENCE; FABRICATION; CONDUCTION;
D O I：
10.1016/j.apsusc.2015.04.057
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on the growth of violet emitting p-type ZnO thin films, with phosphorous (P) and nitrogen (N) codoping, using pulsed laser deposition. XPS studies show that the phosphorous is substituted at Zn site, whereas nitrogen is substituted at oxygen site. Hall measurements confirmed the p-type nature in codoped ZnO thin films. I-V characteristics of the heterojunction formed by n-Si and P, N: ZnO showed rectifying nature. Strong violet emission in PL spectra is attributed to the formation of zinc vacancies. We propose a defect complex, (P-Zn-V-Zn-4N(o)), which acts as an effective acceptor in the P and N codoped ZnO. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：96 / 100
页数：5
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  • [1] p-type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions
    Bian, JM
    Li, XM
    Zhang, CY
    Yu, WD
    Gao, XD
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4070 - 4072
  • [2] Single violet luminescence emitted from ZnO films obtained by oxidation of Zn film on quartz glass
    Fan, XM
    Lian, JS
    Zhao, L
    Liu, Y
    [J]. APPLIED SURFACE SCIENCE, 2005, 252 (02) : 420 - 424
  • [3] Electronic structure and optical properties of substitutional and interstitial phosphor-doped ZnO
    Guan, Li
    Liu, Baoting
    Li, Qiang
    Zhou, Yang
    Guo, Jianxin
    Jia, Guoqi
    Zhao, Qingxun
    Wang, Yinglong
    Fu, Guangsheng
    [J]. PHYSICS LETTERS A, 2011, 375 (05) : 939 - 945
  • [4] Defect-related vibrational and photoluminescence spectroscopy of a codoped ZnO: Al : N film
    He, Haiping
    Zhuge, Fei
    Ye, Zhizhen
    Zhu, Liping
    Zhao, Binghui
    Huang, Jingyun
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (11) : 2339 - 2342
  • [5] Shallow donor formation in phosphorus-doped ZnO thin films
    Heo, YW
    Ip, K
    Park, SJ
    Pearton, SJ
    Norton, DP
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 78 (01): : 53 - 57
  • [6] Native point defects in ZnO
    Janotti, Anderson
    Van de Walle, Chris G.
    [J]. PHYSICAL REVIEW B, 2007, 76 (16)
  • [7] Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient
    Jeong, SH
    Kim, BS
    Lee, BT
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (16) : 2625 - 2627
  • [8] Optical evidence for donor behavior of Sb in ZnO nanowires
    Kumar, E. Senthil
    Mohammadbeigi, F.
    Alagha, S.
    Deng, Z. W.
    Anderson, I. P.
    Wintschel, T.
    Watkins, S. P.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (13)
  • [9] A Codoping Route to Realize Low Resistive and Stable p-Type Conduction in (Li, Ni):ZnO Thin Films Grown by Pulsed Laser Deposition
    Kumar, E. Senthil
    Chatterjee, Jyotirmoy
    Rama, N.
    DasGupta, Nandita
    Rao, M. S. Ramachandra
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (06) : 1974 - 1979
  • [10] Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
    Li, Jichao
    Yao, Bin
    Li, Yongfeng
    Ding, Zhanhui
    Xu, Ying
    Zhang, Ligong
    Zhao, Haifeng
    Shen, Dezhen
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (19)
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