Room-temperature electrically driven phase transition of two-dimensional 1T-TaS2 layers

被引：18

作者：

Zheng, Shoujun ^{[1
,2
]}

Liu, Fucai ^{[3
]}

Zhu, Chao ^{[3
]}

Liu, Zheng ^{[3
]}

Fan, Hong Jin ^{[1
,2
]}

机构：

[1] Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore 637371, Singapore

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Ctr Programmable Mat, Singapore 639798, Singapore

来源：

NANOSCALE | 2017年 / 9卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

CHARGE-DENSITY WAVES; MOTT-INSULATING STATE; MONOLAYER;

D O I：

10.1039/c6nr07541j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Due to the strong electron-electron and electron-phonon interactions, the transition metal dichalcogenide 1T-TaS2 exhibits temperature dependent as well as electric field driven charge density wave (CDW) phase transitions (PTs). In this work, we investigate the thickness dependence of the electric field driven PT in 1T-TaS2 two-dimensional (2D) flakes. Electrically driven PT between high-and low-resistance states occurs at temperatures in the range of 60-300 K. For a thin 1T-TaS2 (<= 8.8 nm) sample, only one PT is triggered, whereas thick films experience double PTs (13-17 nm) and multiple PTs (>= 17.5 nm) until reaching the final low-resistance state. The multiple PTs may imply the existence of hidden nearly-commensurate charge density wave (NCCDW) states. In addition, a threshold electric field is observed, in which the low-resistance state is unable to resume the high-resistance state. Finally, we fabricate a 1T-TaS2/graphene hybrid field effect transistor to achieve a gate-tunable PT at room temperature. Such a hybrid device might provide a new avenue for the construction of CDW-based memories based on 2D materials.

引用

页码：2436 / 2441

页数：6

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