Polysilicon Piezoresistive MEMS Pressure Sensor: Study of Analytical Solutions for Diaphragm and Design & Simulation

被引：0

作者：

Sujit, E. S. ^{[1
]}

Kusuma, N. ^{[2
]}

Hemalatha, B. ^{[1
]}

机构：

[1] SRM Univ, Dept Instrumentat & Control Engn, Kattankulathur, Tamil Nadu, India

[2] Cent Mfg Technol Inst, Sensor & Vis Technol Grp, Bengaluru, India

来源：

2017 INTERNATIONAL CONFERENCE ON COMMUNICATION AND SIGNAL PROCESSING (ICCSP) | 2017年

关键词：

Piezoresistivity; Finite element method (FEM); Pressure sensor; MEMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pressure measurement is a key part of many commercial and industrial systems. Piezoresistive pressure sensors are simpler to integrate with electronics, they are inherently shielded from RF noise and their response is more linear while compared to capacitive pressure sensors. And piezoresistive devices have always dominated the pressure sensor market. The analyticals that are typically used to model the diaphragm of the pressure sensor have been analysed by many researchers. To optimize the pressure sensor for parameters like linearity and sensitivity, the Finite Element Method (FEM) is incorporated. The selection of appropriate parameters of piezoresistors such as the shape and the position of the piezoresistor on the pressure sensor diaphragm, thickness of diaphragm are important. This study shows the scope of using analytical solutions and design techniques for a piezoresistive pressure sensor.

引用

页码：1606 / 1610

页数：5

共 19 条

[11]

lang-Sub Leel E. - S. Y. - H. - E, 2014, 2014 14 INT C CONTR, P874

[12]

Lenkkeri J., 2010, IEEE 11 INT C THERM

[13] The empirical verification of the FEM model of semiconductor pressure sensor [J].

Pancewicz, T ;

Jachowicz, R ;

Gniazdowski, Z ;

Azgin, Z ;

Kowalski, P .

SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :260-265

[14]

Pryor Roger W., 2011, MULTIPHYSICS MODELIN, P1

[15]

Ripka Pavel, 2010, MODERN SENSORS HDB, P347

[16] Recent trends in automotive sensors [J].

Schatz, O .

PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3, 2004, :236-239

[17]

Shettar V., 2014, INT J MULTIDISPL RES, V6, P73

[18]

Shi X, 2010, 2010 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP), P1337, DOI 10.1109/ICEPT.2010.5582806

[19] Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications [J].

Wu, CH ;

Zorman, CA ;

Mehregany, M .

IEEE SENSORS JOURNAL, 2006, 6 (02) :316-324

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