Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

被引：62

作者：

Ke, W. C. ^{[1
]}

Fu, C. P.

Chen, C. Y.

Lee, L.

Ku, C. S.

Chou, W. C.

Chang, W. -H.

Lee, M. C.

Chen, W. K.

Lin, W. J.

Cheng, Y. C.

机构：

[1] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2203510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures. (c) 2006 American Institute of Physics.

引用

页数：3

共 18 条

[11] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA [J].

MONEMAR, B .

PHYSICAL REVIEW B, 1974, 10 (02) :676-681

[12] Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots [J].

Moon, YT ;

Kim, DJ ;

Park, JS ;

Oh, JT ;

Lee, JM ;

Ok, YW ;

Kim, H ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2001, 79 (05) :599-601

[13] Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells [J].

Perlin, P ;

Iota, V ;

Weinstein, BA ;

Wisniewski, P ;

Suski, T ;

Eliseev, PG ;

Osinski, M .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :2993-2995

[14] Growth of InN quantum dots by MOVPE [J].

Ruffenach, S ;

Maleyre, B ;

Briot, O ;

Gil, B .

FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4), 2005, 2 (02) :826-832

[15] Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation [J].

Schenk, HPD ;

Leroux, M ;

de Mierry, P .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) :1525-1534

[16] Probing individual localization centers in an InGaN/GaN quantum well -: art. no. 106802 [J].

Schömig, H ;

Halm, S ;

Forchel, A ;

Bacher, G ;

Off, J ;

Scholz, F .

PHYSICAL REVIEW LETTERS, 2004, 92 (10) :106802-1

[17] SOME PROPERTIES OF INN FILMS PREPARED BY REACTIVE EVAPORATION [J].

TRAINOR, JW ;

ROSE, K .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :821-828

[18] Temperature dependence of the fundamental band gap of InN [J].

Wu, J ;

Walukiewicz, W ;

Shan, W ;

Yu, KM ;

Ager, JW ;

Li, SX ;

Haller, EE ;

Lu, H ;

Schaff, WJ .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) :4457-4460

← 1 2 →