Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

被引：62
作者：
Ke, W. C. [1 ]
Fu, C. P.
Chen, C. Y.
Lee, L.
Ku, C. S.
Chou, W. C.
Chang, W. -H.
Lee, M. C.
Chen, W. K.
Lin, W. J.
Cheng, Y. C.
机构：
[1] Natl Tsing Hua Univ, Dept Electrophys, Hsinchu 300, Taiwan
[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
关键词：
D O I：
10.1063/1.2203510
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 18 条
  • [1] Indium nitride (InN): A review on growth, characterization, and properties
    Bhuiyan, AG
    Hashimoto, A
    Yamamoto, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 2779 - 2808
  • [2] BOROVITSKAYA E, 2002, QUANTUM DOTS, P94
  • [3] Ultrafast carrier dynamics in InN epilayers
    Chen, F
    Cartwright, AN
    Lu, H
    Schaff, WJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) : 10 - 14
  • [4] ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES
    CHIN, VWL
    TANSLEY, TL
    OSTOCHAN, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7365 - 7372
  • [5] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
    Cho, YH
    Gainer, GH
    Fischer, AJ
    Song, JJ
    Keller, S
    Mishra, UK
    DenBaars, SP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (10) : 1370 - 1372
  • [6] ''Blue'' temperature-induced shift and band-tail emission in InGaN-based light sources
    Eliseev, PG
    Perlin, P
    Lee, JY
    Osinski, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (05) : 569 - 571
  • [7] Transient electron transport in wurtzite GaN, InN, and AlN
    Foutz, BE
    O'Leary, SK
    Shur, MS
    Eastman, LF
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7727 - 7734
  • [8] Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
    Lee, MC
    Lin, HC
    Pan, YC
    Shu, CK
    Ou, J
    Chen, WH
    Chen, WK
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2606 - 2608
  • [9] Optical and electrical properties of Al-rich AlGaN alloys
    Li, J
    Nam, KB
    Lin, JY
    Jiang, HX
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3245 - 3247
  • [10] Improvement on epitaxial grown of InN by migration enhanced epitaxy
    Lu, H
    Schaff, WJ
    Hwang, J
    Wu, H
    Yeo, W
    Pharkya, A
    Eastman, LF
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2548 - 2550
12