Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer

被引：0

作者：

Cheng, Xinhong ^{[1
]}

Song, Zhaorui ^{[2
]}

Xing, Yumei ^{[2
]}

Yu, Yuehui ^{[2
]}

Shen, Dashen ^{[3
]}

机构：

[1] Univ Wenzhou, Lungtan 32500, Taiwan

[2] Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[3] Univ Alabama, Huntsville, AL 35899 USA

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

基金：

美国国家科学基金会;

关键词：

Gate dielectrics; HfO2; Interfacial layer; Capping layer;

D O I：

10.1016/j.tsf.2008.08.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

HfAl2O5 dielectric film with an O-gettering Ti-capping layer was treated with rapid thermal annealing process and its interfacial structure and surface morphology were reported. X-ray reflectivity measurements and X-ray photoelectron spectroscopy indicated that the interfacial layers were composed of a 0.5 nm HfAlSiO layer and a 1.5 nm Si-x(SiO2)(1-x) (X<1) layer for the as-deposited film. However, for the annealed film, HfAlSiO layer was not found and the 1.5 nm Si-x(SiO2)(1-x) transformed to a 1 nm SiO2. Atom force microscopy showed that a Ti-capping layer did not affect surface roughness. (C) 2008 Elsevier BY. All rights reserved.

引用

页码：462 / 464

页数：3

共 8 条

[1] Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron-beam evaporation [J].