Optical, structural and electrical properties of tin oxide films prepared by magnetron sputtering

被引:22
作者
Karapatnitski, IA [1 ]
Mit', KA [1 ]
Mukhamedshina, DM [1 ]
Beisenkhanov, NB [1 ]
机构
[1] Minist Educ & Sci, Inst Phys & Technol, Alma Ata 480082, Kazakhstan
关键词
tin oxide thin film; structure;
D O I
10.1016/S0257-8972(01)01611-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Films with thickness of 150-450 nm were deposited at a rate of 0.5 Angstrom/s in an argon-oxygen atmosphere on polycrystalline corundum, quartz and glass slides. The films were annealed in air at temperature 550 degreesC for 0.5, 1, 2, 4 and 8 h to stabilize their parameters. A correlation between the electrical resistivity and optical and structural properties of the films was found. Transparent films for wavelengths in the range 200-1200 nm as well as as-sensitive films for sensors were obtained. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:76 / 81
页数:6
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