Pulsed laser deposition of silicon films for solar cell applications

被引：9

作者：

Hanabusa, M ^{[1
]}

Liu, ZX ^{[1
]}

Nakamura, N ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] TOYOTA MOTOR CO LTD,FUTURE PROJECT DIV 1,SUSONO,SHIZUOKA 41011,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 121卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00539-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Crystalline silicon thin films were deposited by pulsed laser deposition on silicon wafers heated to 800 degrees C. The number of particles mixed into the films was reduced by using a short-wavelength ArF laser, Oxygen was incorporated easily in the deposited silicon films unless the deposition chamber was kept in high vacuum before and during deposition. Using n-type Si targets, we formed a p-n junction on p-type Si wafers. A photovoltaic effect was easily observed under illumination.

引用

页码：367 / 370

页数：4

共 50 条

[21] Pulsed laser deposition of silicon containing carbon thin films [J].

Lackner, JM ;

Waldhauser, W ;

Ebner, R ;

Fian, A ;

Jakopic, G ;

Leising, G ;

Schöberl, T .

SURFACE & COATINGS TECHNOLOGY, 2004, 177 :360-364

[22] PULSED LASER DEPOSITION OF BARIUM-TITANATE FILMS ON SILICON [J].

NAWATHEY, R ;

VISPUTE, RD ;

CHAUDHARI, SM ;

KANETKAR, SM ;

OGALE, SB .

SOLID STATE COMMUNICATIONS, 1989, 71 (01) :9-12

[23] Pulsed laser deposition of praseodymium oxide films on silicon(100) [J].

Ratzke, M ;

Wolfframm, D ;

Arguirov, T ;

Kappa, M ;

Reif, J .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6) :1247-1249

[24] Pulsed laser deposition of nanostructured CeO2 antireflection coating for silicon solar cell [J].

Safa A. Abdulrahman ;

Muslim F. Jawad ;

Raid A. Ismail .

Journal of Materials Science: Materials in Electronics, 2023, 34

[25] Pulsed laser deposition of nanostructured CeO2 antireflection coating for silicon solar cell [J].

Abdulrahman, Safa A. ;

Jawad, Muslim F. ;

Ismail, Raid A. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (33)

[26] Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition [J].

Tan, CF ;

Chen, XY ;

Lu, YF ;

Wu, YH ;

Cho, BJ ;

Zeng, JN .

JOURNAL OF LASER APPLICATIONS, 2004, 16 (01) :40-45

[27] Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition [J].

Chen, XY ;

Lu, YF ;

Wu, YH ;

Cho, BJ ;

Yang, BJ ;

Liew, TYF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :1731-1737

[28] Laser annealing and simulation of amorphous silicon thin films for solar cell applications [J].

Theodorakos, I. ;

Raptis, Y. S. ;

Vamvakas, V. ;

Tsoukalas, D. ;

Zergioti, I. .

LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XIX, 2014, 8967

[29] ZnO THIN FILMS BY PULSED LASER DEPOSITION WITH APPLICATIONS IN SENSORS [J].

Constantinoiu, Izabela ;

Viespe, Cristian ;

Busuioc, Cristina ;

Jinga, Sorin-Ion .

UPB Scientific Bulletin, Series B: Chemistry and Materials Science, 2024, 86 (01) :119-134

[30] ZnO THIN FILMS BY PULSED LASER DEPOSITION WITH APPLICATIONS IN SENSORS [J].

Constantinoiu, Izabela ;

Viespe, Cristian ;

Busuioc, Cristina ;

Jinga, Sorin-Ion .

UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES B-CHEMISTRY AND MATERIALS SCIENCE, 2024, 86 (01) :119-134

← 1 2 3 4 5 →