Pulsed laser deposition of silicon films for solar cell applications

被引：9

作者：

Hanabusa, M ^{[1
]}

Liu, ZX ^{[1
]}

Nakamura, N ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] TOYOTA MOTOR CO LTD,FUTURE PROJECT DIV 1,SUSONO,SHIZUOKA 41011,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 121卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00539-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Crystalline silicon thin films were deposited by pulsed laser deposition on silicon wafers heated to 800 degrees C. The number of particles mixed into the films was reduced by using a short-wavelength ArF laser, Oxygen was incorporated easily in the deposited silicon films unless the deposition chamber was kept in high vacuum before and during deposition. Using n-type Si targets, we formed a p-n junction on p-type Si wafers. A photovoltaic effect was easily observed under illumination.

引用

页码：367 / 370

页数：4

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