Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

被引：5

作者：

Tansel, Tunay ^{[1
]}

Kutluer, Kutlu ^{[1
]}

Muti, Abdullah ^{[2
]}

Salihoglu, Omer ^{[2
]}

Aydinli, Atila ^{[2
]}

Turan, Rasit ^{[1
]}

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[2] Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 03期

关键词：

PASSIVATION; DEVICES;

D O I：

10.7567/APEX.6.032202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation energies below 60 meV and is inversely proportional to the reverse bias. In order to satisfactorily explain the experimental data, we hereby propose the existence of a surface recombination noise that is a function of both the frequency and bias. The calculated noise characteristics indeed show good agreement with the experimental data. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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[1] Research on passivation of type II InAs/GaSb superlattice photodiodes [J].

Zhang Lei ;

Zhang Li-xue ;

Shen Xiang-wei ;

Zhu Xu-bo ;

Peng Zhen-yu ;

Lv Yan-qiu ;

Si Jun-jie ;

Sun Wei-guo .

INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: INFRARED IMAGING AND APPLICATIONS, 2013, 8907

[2] Anode sulphur passivation of InAs/GaSb superlattice infrared photodiodes [J].

Guo, Jie ;

Hao, Rui-Ting ;

Duan, Jian-Jin ;

Xu, Lin ;

Li, Yin-Zhu .

Guangzi Xuebao/Acta Photonica Sinica, 2014, 43 (01)

[3] Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes [J].

Tansel, Tunay ;

Kutluer, Kutlu ;

Salihoglu, Omer ;

Aydinli, Atilla ;

Aslan, Bulent ;

Arikan, Bulent ;

Kilinc, Murat Celal ;

Ergun, Yuksel ;

Serincan, Ugur ;

Turan, Rasit .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (09) :790-792

[4] Low-frequency noise behavior at Reverse Bias Region in InAs/GaSb Superlattice Photodiodes on Mid-Wave Infrared [J].

Tansel, T. ;

Kutluer, K. ;

Muti, A. ;

Salihoglu, O. ;

Aydinli, A. ;

Turan, R. .

INFRARED TECHNOLOGY AND APPLICATIONS XXXIX, 2013, 8704

[5] Modeling and simulation of long-wave infrared InAs/GaSb strained layer superlattice photodiodes with different passivants [J].

Banerjee, Koushik ;

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Ghosh, Siddhartha .

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[6] Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice [J].

Peng, Ruiqin ;

Jiao, Shujie ;

Jiang, Dongwei ;

Li, Hongtao ;

Zhao, Liancheng .

THIN SOLID FILMS, 2017, 629 :55-59

[7] Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing [J].

Das, Sona ;

Das, Utpal ;

Gautam, Nutan ;

Krishna, Sanjay .

INTEGRATED OPTICS: PHYSICS AND SIMULATIONS II, 2015, 9516

[8] GaSb for passivating type-II InAs/GaSb superlattice mesas [J].

Szmulowicz, F. ;

Brown, G. J. .

INFRARED PHYSICS & TECHNOLOGY, 2010, 53 (05) :305-307

[9] InAs/GaSb superlattice detectors operating at room temperature [J].

Plis, Elena ;

Lee, Sang Jun ;

Zhu, Zhimei ;

Aratout, Abdenour ;

Krishna, Sanjay .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) :1269-1274

[10] Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes [J].

Koushik Banerjee ;

Siddhartha Ghosh ;

Shubhrangshu Mallick ;

Elena Plis ;

Sanjay Krishna .

Journal of Electronic Materials, 2009, 38 :1944-1947

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