Recent advances in high power rf windows at X-band

被引：0
|
作者：
Fowkes, WR [1 ]
Callin, RS [1 ]
Jongewaard, EN [1 ]
Sprehn, DW [1 ]
Tantawi, SG [1 ]
Vlieks, AE [1 ]
机构：
[1] Stanford Linear Accelerator Ctr, Stanford, CA 94309 USA
来源：
HIGH ENERGY DENSITY MICROWAVES | 1999年 / 474卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The peak rf power levels produced by advanced high frequency power sources is beyond the level that can safely be transmitted through a single rf window of conventional design. New approaches are required to keep the rf electric fields at a managable level in the vicinity of the rf window. This paper describes some of the recent rf window design considerations and test results. Included are rf windows using one or more of the following features: over-moded dimensions, multiple modes, rf corona shields, and forced electric field reduction.
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收藏
页码：289 / 295
页数：7
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