Response enhancement at low magnetic fields in magneto resistive thin film sensors

被引：2
|
作者：
González, OJ [1 ]
Castaño, E [1 ]
Gracia, FJ [1 ]
机构：
[1] Ctr Estudios & Invest Tecn Gipuzkoa CEIT, San Sebastian 20018, Spain
来源：
VACUUM | 2002年 / 64卷 / 3-4期
关键词：
low field magnetoresistance; sputtering; nanocrystalline structure;
D O I：
10.1016/S0042-207X(01)00329-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline thin films of MnFe2O4 (MFO) and La0.67Sr0.33MnO3 (LSMO) were deposited by r.f. reactive sputtering and subsequent annealing forming a heterostructure composed of MFO/LSMO/MFO. Quick MFO thin films saturation and saturation magnetization value are decisive factors that make this technique efficient and useful to enhance the low field magnetoresistance response of perovskite manganites in magnetic sensor applications. The heterostructure presents, at low field (10.34 klA/m), a magnetoresistance of similar to0.22% while LSMO thin films without MFO showed a null response. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：321 / 326
页数：6
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